characteristic test conditions min. typ. max. unit semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 1/94 bv dss i d(on) r ds(on) i dss i gss v gs(th) v dss i d i dm , i lm v gs p d t j , t stg t l 1 3 4 2 r 38.0 (1.496) 38.2 (1.504) 30.1 (1.185) 30.3 (1.193) 14.9 (0.587) 15.1 (0.594) 3.3 (0.129) 3.6 (0.143) 7.8 (0.307) 8.2 (0.322) 31.5 (1.240) 31.7 (1.248) 4.0 (0.157) (2 places) r = 4.0 (0.157) 4.2 (0.165) ) ) 4.1 (0.161 4.3 (0.169 4.8 (0.187) 4.9 (0.193) (4 places) w = h = 8.9 (0.350) 9.6 (0.378) 11.8 (0.463) 12.2 (0.480) hex nut m 4 (4 places) 12.6 (0.496) 12.8 (0.504) 25.2 (0.992) 25.4 (1.000) 0.75 (0.030) 0.85 (0.033) 5.1 (0.201) 5.9 (0.232) 1.95 (0.077) 2.14 (0.084) sotC227 package outline. dimensions in mm (inches) drain C source voltage continuous drain current pulsed drain current 1 and inductive current clamped gate C source voltage total power dissipation @ t case = 25c linear derating factor operating and storage junction temperature range lead temperature : 0.063 from case for 10 sec. v gs = 0v , i d = 250 m a v ds > i d(on) x r ds(on) max v gs = 10v v gs =10v , i d = 0.5 i d [cont.] v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 5.0ma nCchannel enhancement mode high voltage power mosfets 1000 33 132 30 690 5.52 C25 to 125 300 v a a v w w / c c drain C source breakdown voltage on state drain current 2 drain C source on state resistance 2 zero gate voltage drain current (v gs = 0v) gate C source leakage current gate threshold voltage 1000 33 0.26 250 1000 100 24 v a w m a na v absolute maximum ratings (t case = 25c unless otherwise stated) 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% static electrical ratings (t case = 25c unless otherwise stated) BFC15 lab seme v dss 1000v i d(cont) 33a r ds(on) 0.26 w w * source terminals are shorted internally. current handling capability is equal for either source terminal. 4th generation mosfet terminal 1 source* terminal 2 drain terminal 3 gate terminal 4 source*
BFC15 characteristic test conditions min. typ. max. unit c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristic test conditions min. typ. max. unit 33 132 1.8 625 1250 2000 25 49 70 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 1/94 i s i sm v sd t rr q rr v gs = 0v , i s = C i d [cont.] i s = C i d [cont.] dl s / dt = 100a/ m s continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c characteristic min. typ. max. unit 3 5 2500 70 13 l d l s v isolation c isolation torque internal drain inductance (measured from drain terminal to centre of die) internal source inductance (measured from source terminals to source bond pads) rms voltage (50C60 hz sinusoidal waveform from terminals to mounting base for 1 min.) drain-to-mounting base capacitance f = 1mhz maximum torque for device mounting screws and electrical terminations nh v pf inClbs characteristic min. typ. max. unit 0.18 0.05 r q jc r q cs junction to case case to sink (use high efficiency thermal joint compound and planar heat sink surface.) c/w d ynamic chara cteristics source C drain diode ra tings and chara cteristics p a cka ge chara cteristics thermal chara cteristics 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% 3) see milCstdC750 method 3471 input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate C source charge gate C drain (miller) charge turnCon delay time rise time turn-off delay time fall time v gs = 0v v ds = 25v f = 1mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 w pf nc ns 11610 14000 1345 1880 415 620 465 700 83 125 61 90 21 40 19 40 70 105 14 30 l ab sem e caution electrostatic sensitive devices. anti-static procedures must be followed.
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